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Datasheet
Standard EEPROMs
Plug & Play EEPROMs
(for Display)
BR24C21xxx Series (1K)
● General Description
BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1 /DDC2
displays
TM TM
interfaces for Plug and Play
Compatible with both DDC1 /DDC2
● Features
TM TM
Operating voltage range: 2.5V to 5.5V
Page write function: 8bytes
Low power consumption
Active (at 5V) : 1.5mA (typ)
Stand-by (at 5V) : 0.1μA (typ)
● Packages W(Typ.) x D(Typ.) x H(Max.)
Address auto increment function during Read
operation
Data security
Write enable feature (VCLK)
Write protection at low Vcc
Initial data=FFh
Data retention: 10years
Rewriting possible up to 100,000 times
● BR24C21xxx series
DIP-T8
9.30mm x 6.50mm x 7.10mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
SOP8
5.00mm x 6.20mm x 1.71mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
Capacity Type
1Kbit BR24C21
Power source Voltage
2.5V to 5.5V
DIP-T8
●
SOP8
●
SOP-J8
●
SSOP-B8
●
● Absolute Maximum Ratings
Parameter Symbol
Ratings
Unit
Remarks
Supply Voltage
V CC
-0.3 to +6.5
800(DIP-T8)
V
When using at Ta=25 ℃ or higher 8.0mW to be reduced per 1 ℃ .
Power Dissipation
Pd
450 (SOP8)
450 (SOP-J8)
mW
When using at Ta=25 ℃ or higher 4.5mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 4.5mW to be reduced per 1 ℃ .
350(SSOP-B8)
When using at Ta=25 ℃ or higher 3.5mW to be reduced per 1 ℃ .
Storage Temperature
Operating Temperature
Terminal Voltage
Tstg
Topr
‐
-65 to +125
-40 to +85
-0.3 to Vcc+0.3
℃
℃
V
● Memory cell characteristics
Parameter
Write/Erase Cycle
Data Retention
Min.
100,000
10
Limits
Typ.
－
－
Max
－
－
Unit
Times
Years
○ Product structure ： Silicon monolithic integrated circuit
○ This product is not designed protection against radioactive rays
. www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 14 ? 001
1/18
TSZ02201-0R2R0G100270-1-2
10.Jul.2012 Rev.001
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